SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

PURPOSE: A semiconductor storage device and a method of manufacturing the same are provided to improve the high integration of a device by installing the dummy hole close to a pillar member and securing the minimum distance between a dummy hole and a contact. CONSTITUTION: A silicon oxide film(13) i...

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Bibliographic Details
Main Authors HIGASHI KAZUYUKI, SUDO GAKU, WATANABE NOBUTAKA
Format Patent
LanguageEnglish
Korean
Published 19.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor storage device and a method of manufacturing the same are provided to improve the high integration of a device by installing the dummy hole close to a pillar member and securing the minimum distance between a dummy hole and a contact. CONSTITUTION: A silicon oxide film(13) is formed on a silicon substrate(11). An electrode film(18) and an insulating film(19) are formed in a silicon oxide film alternately to form laminate. A contact(45) is contacted to an electrode layer from the end of the laminate. A semiconductor device penetrates through the laminate to laminating direction. A charge storing layer is formed between an electrode film and the semiconductor member.
Bibliography:Application Number: KR20110018851