ETCHING SYSTEM

PURPOSE: An etching system is provided to identically form the depth of recesses of a processed substrate after finishing etching by changing gas flow rate, power source, and pressure and relatively reducing etching rate. CONSTITUTION: A light source(26) irradiates a processed substrate(W) with inci...

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Bibliographic Details
Main Authors SEONG, GEUM JUNG, PARK, SANG WUK, KIM, YONG JIN, LEE, CHAN MI, BAEK, KYE HYUN
Format Patent
LanguageEnglish
Korean
Published 14.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An etching system is provided to identically form the depth of recesses of a processed substrate after finishing etching by changing gas flow rate, power source, and pressure and relatively reducing etching rate. CONSTITUTION: A light source(26) irradiates a processed substrate(W) with incident light. Optical fiber(24) is connected to a etching process control device(25) controlling an etching process of the processed substrate. A light amount measurement part(27) measures each wavelength intensity of coherent light which is entered through the optical fiber. A signal processing part(28) detects a maximum value of the intensity of the coherent light and a generating time point of a minimum value. A controller(29) is connected to a power source(16), a processing gas supplying part(19), and an exhausting part(14).
Bibliography:Application Number: KR20100087071