SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a space between gate structures from increasing by forming a capping layer through a high density plasma deposition process having a low step coverage characteristic. CONSTITUTION: A first gate structure(142)...

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Bibliographic Details
Main Authors LEE, SEUNG HUN, LEE, BYEONG CHAN, KANG, SANG BOM
Format Patent
LanguageEnglish
Korean
Published 12.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a space between gate structures from increasing by forming a capping layer through a high density plasma deposition process having a low step coverage characteristic. CONSTITUTION: A first gate structure(142) and a second gate structure(144) are respectively formed on a first area(I) and a second area(II) of a substrate(100). A first capping layer(160) covering up the first gate structure and second gate structure is formed on the substrate. The first capping layer part on the first area of the substrate is removed. A top portion of the first area on the substrate is etched and a first trench is formed. A first epitaxial layer filling the first trench is formed.
Bibliography:Application Number: KR20100085986