METHOD FOR FABRICATING A CIS OR CIGS THIN FILM

PURPOSE: A method for manufacturing a uniform CIS or CIGS thin film is provided to obtain a thin film with various shapes and phases by easily controlling the composition of solutions, the density of impurities, reaction time, and temperature. CONSTITUTION: A first electrode layer(110) is formed on...

Full description

Saved in:
Bibliographic Details
Main Authors SONG, KI BONG, CHUNG, MYUNG AE, CHO, JUNG MIN, SUH, JEONG DAE, BAE, EUN JIN
Format Patent
LanguageEnglish
Korean
Published 06.03.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A method for manufacturing a uniform CIS or CIGS thin film is provided to obtain a thin film with various shapes and phases by easily controlling the composition of solutions, the density of impurities, reaction time, and temperature. CONSTITUTION: A first electrode layer(110) is formed on a substrate(100). A seed particle layer(120) including a copper indium compound seed particle is formed on the first electrode layer. Solutions(130) with water soluble precursors are spread on the seed particle layer. The solutions with the water soluble precursors include organic solvents and/or inorganic solvents. The spread solutions are changed into a thin film(140) at a high temperature.
Bibliography:Application Number: KR20100081774