VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF

• Main Authors: KIM, SUNG RYUL, KIM, DAE CHEOL, CHIN, HONG KEE, YEO, YUN JONG, JEONG, KI HUN
• Format: Patent
• Language: English; Korean
• Published: 22.02.2012
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A visible ray sensing transistor and a manufacturing method thereof and a display device are provided to solve pattern defects without an additional process by thinly forming an etch stopping layer by using titanium and copper. CONSTITUTION: A semiconductor is formed on a substrate(210). Resistibility contact members(263C,265C,263I) are formed on the semiconductor. An etch stopping layer(40) is formed on the resistibility contact member. Source electrodes(273C,273I,273V) and drain electrodes(275C,275I,275V) are formed on the etch stopping layer. The source electrode and the drain electrode comprise a lower layer and an upper layer which is located on the lower layer. A protective layer(250) is formed on the source electrode and the drain electrode. Gate electrodes(224C,224V,224I) are formed on the protective layer.