VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
PURPOSE: A visible ray sensing transistor and a manufacturing method thereof and a display device are provided to solve pattern defects without an additional process by thinly forming an etch stopping layer by using titanium and copper. CONSTITUTION: A semiconductor is formed on a substrate(210). Re...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
22.02.2012
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A visible ray sensing transistor and a manufacturing method thereof and a display device are provided to solve pattern defects without an additional process by thinly forming an etch stopping layer by using titanium and copper. CONSTITUTION: A semiconductor is formed on a substrate(210). Resistibility contact members(263C,265C,263I) are formed on the semiconductor. An etch stopping layer(40) is formed on the resistibility contact member. Source electrodes(273C,273I,273V) and drain electrodes(275C,275I,275V) are formed on the etch stopping layer. The source electrode and the drain electrode comprise a lower layer and an upper layer which is located on the lower layer. A protective layer(250) is formed on the source electrode and the drain electrode. Gate electrodes(224C,224V,224I) are formed on the protective layer. |
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Bibliography: | Application Number: KR20100077962 |