Memory device and method of manufacturing the same
PURPOSE: A memory device and a manufacturing method thereof are provided to arrange a silicon recess which has a multi-facet type three-dimensional shape on the surface of an active region, thereby improving a contact area of a contact structure. CONSTITUTION: A substrate(10) comprises a field regio...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English Korean |
| Published |
08.02.2012
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| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A memory device and a manufacturing method thereof are provided to arrange a silicon recess which has a multi-facet type three-dimensional shape on the surface of an active region, thereby improving a contact area of a contact structure. CONSTITUTION: A substrate(10) comprises a field region and an active region. The substrate comprises a silicon recess(12) which is connected to a contact hole in a part of the active region. An insulating film(20) is arranged on the substrate in order to cover conductive structures. The insulating film comprises the contact hole(22) which partially exposes the substrate. A conductive pattern(30) buries the contact hole. |
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| AbstractList | PURPOSE: A memory device and a manufacturing method thereof are provided to arrange a silicon recess which has a multi-facet type three-dimensional shape on the surface of an active region, thereby improving a contact area of a contact structure. CONSTITUTION: A substrate(10) comprises a field region and an active region. The substrate comprises a silicon recess(12) which is connected to a contact hole in a part of the active region. An insulating film(20) is arranged on the substrate in order to cover conductive structures. The insulating film comprises the contact hole(22) which partially exposes the substrate. A conductive pattern(30) buries the contact hole. |
| Author | SON, YOON HO CHOI, SUK HUN LEE, MONG SUP HWANG, IN SEAK LEE, SANG JUN CHUNG, DAE HYUK |
| Author_xml | – fullname: LEE, SANG JUN – fullname: CHOI, SUK HUN – fullname: HWANG, IN SEAK – fullname: CHUNG, DAE HYUK – fullname: SON, YOON HO – fullname: LEE, MONG SUP |
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| Notes | Application Number: KR20100073212 |
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| RelatedCompanies | SAMSUNG ELECTRONICS CO., LTD |
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| Snippet | PURPOSE: A memory device and a manufacturing method thereof are provided to arrange a silicon recess which has a multi-facet type three-dimensional shape on... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Memory device and method of manufacturing the same |
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