Memory device and method of manufacturing the same

PURPOSE: A memory device and a manufacturing method thereof are provided to arrange a silicon recess which has a multi-facet type three-dimensional shape on the surface of an active region, thereby improving a contact area of a contact structure. CONSTITUTION: A substrate(10) comprises a field regio...

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Bibliographic Details
Main Authors LEE, SANG JUN, CHOI, SUK HUN, HWANG, IN SEAK, CHUNG, DAE HYUK, SON, YOON HO, LEE, MONG SUP
Format Patent
LanguageEnglish
Korean
Published 08.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A memory device and a manufacturing method thereof are provided to arrange a silicon recess which has a multi-facet type three-dimensional shape on the surface of an active region, thereby improving a contact area of a contact structure. CONSTITUTION: A substrate(10) comprises a field region and an active region. The substrate comprises a silicon recess(12) which is connected to a contact hole in a part of the active region. An insulating film(20) is arranged on the substrate in order to cover conductive structures. The insulating film comprises the contact hole(22) which partially exposes the substrate. A conductive pattern(30) buries the contact hole.
Bibliography:Application Number: KR20100073212