Semiconductor Memory And Manufacturing Method Thereof

PURPOSE: A semiconductor memory and a manufacturing method thereof are provided to prevent an MTJ(Magnetic Tunnel Junction) from being damaged due to a wet attach by forming a magnetoresistive random access memory. CONSTITUTION: A first top electrode(130a) and a spacer(160) are used as an etch barri...

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Bibliographic Details
Main Authors LEE, MIN SUK, JUNG, BO KYOUNG, GYUN, BYUNG GU, SHIN, CHANG HYUP
Format Patent
LanguageEnglish
Korean
Published 02.02.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PURPOSE: A semiconductor memory and a manufacturing method thereof are provided to prevent an MTJ(Magnetic Tunnel Junction) from being damaged due to a wet attach by forming a magnetoresistive random access memory. CONSTITUTION: A first top electrode(130a) and a spacer(160) are used as an etch barrier. A bottom electrode(100a) is formed by etching a bottom electrode layer. The thickness of the first top electrode layer is 700 Å. The bottom electrode is connected to a unit memory cell or external circuit.
Bibliography:Application Number: KR20100070527