METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE

A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon laye...

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Bibliographic Details
Main Authors DELGADINO GERARDO A, CHENG YU, SIRARD STEPHEN M, YEN BI MING, TAKESHITA KENJI, BAILEY ANDREW D. III, LE DANIEL, JI BING, MORAVEJ MARYAM, KO, JUNG MIN, HUDSON ERIC A, HEFTY ROBERT C
Format Patent
LanguageEnglish
Korean
Published 31.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
Bibliography:Application Number: KR20117023645