CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPTY AND FILLED WELLS

A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors ("IGFETs"), to achieve desired electronic...

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Main Authors BULUCEA CONSTANTIN, BAHL SANDEEP R, PARKER D. COURTNEY, ARCHER DONALD M, CHAPARALA PRASAD, FRENCH WILLIAM D, YANG JENG JIUN (DECEASED)
Format Patent
LanguageEnglish
Korean
Published 11.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors ("IGFETs"), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs (100, 102, 112, 114, 124, and 126) utilize empty wells (180, 182, 192, 194, 204, and 206) in achieving desired transistor characteristics. Other IGFETs (108, 110, 116, 118, 120, and 122) utilize filled wells (188, 190, 196, 198, 200, and 202) in achieving desired transistor characteristics. The combination of empty and filled wells enables the semiconductor fabrication platform to provide a wide variety of high-performance IGFETs from which circuit designers can select particular IGFETs for various analog and digital applications, including mixed-signal applications.
Bibliography:Application Number: KR20117025420