SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

PURPOSE: A semiconductor device and a forming method thereof are provided to improve yield and prevent the deterioration of a semiconductor device by burying an insulation layer in a punch area when a metal contact plug is formed. CONSTITUTION: A gate(102) is formed on an active area(100). A punch a...

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Bibliographic Details
Main Author KIM, HYUNG KYU
Format Patent
LanguageEnglish
Korean
Published 10.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device and a forming method thereof are provided to improve yield and prevent the deterioration of a semiconductor device by burying an insulation layer in a punch area when a metal contact plug is formed. CONSTITUTION: A gate(102) is formed on an active area(100). A punch area exposes the gate. An insulation layer(116a) is buried in a punch area. A metal contact plug(122) is formed on the upper side of the insulation layer and is connected to a bit line(108). A first barrier layer(118a) is formed in the sidewall of a second barrier layer(120).
Bibliography:Application Number: KR20100063994