HIGH-VOLTAGE TRANSISTOR DEVICE WITH INTEGRATED RESISTOR

PURPOSE: A high voltage transistor device with an integrated register is provided to raise a terminal end to a high voltage level by switching a node with a positive 550V. CONSTITUTION: A dielectric layer(40) is formed on a first buried area and a second buried area. A resistive material layer is fo...

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Bibliographic Details
Main Authors BANERJEE SUJIT, PARTHASARATHY VIJAY
Format Patent
LanguageEnglish
Korean
Published 09.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A high voltage transistor device with an integrated register is provided to raise a terminal end to a high voltage level by switching a node with a positive 550V. CONSTITUTION: A dielectric layer(40) is formed on a first buried area and a second buried area. A resistive material layer is formed on the dielectric layer. The resistive material layer has a first end and a second end. A first terminal and a second terminal are respectively connected to the first end and the second end of the resistive material layer. A third terminal is electrically connected to a second positively doped area.
Bibliography:Application Number: KR20110136721