SEMICONDUCTOR LIGHT-DETECTING ELEMENT

A back-illuminated type semiconductor light-detecting element comprising: a silicon substrate comprised of a semiconductor of a first conductivity type, having a first principal surface and a second principal surface opposed to each other, and having a semiconductor region of a second conductivity t...

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Bibliographic Details
Main Authors SAKAMOTO AKIRA, NAGANO TERUMASA, IIDA TAKASHI, YAMAMURA KAZUHISA, YAMAMOTO KOEI
Format Patent
LanguageEnglish
Korean
Published 21.12.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A back-illuminated type semiconductor light-detecting element comprising: a silicon substrate comprised of a semiconductor of a first conductivity type, having a first principal surface and a second principal surface opposed to each other, and having a semiconductor region of a second conductivity type formed on the first principal surface side, wherein on the silicon substrate, an accumulation layer of the first conductivity type having a higher impurity concentration than the silicon substrate is formed on the second principal surface side and an irregular asperity is formed in at least a region opposed to the semiconductor region of the second conductivity type in the second principal surface, and wherein the second principal surface constitutes a light incident surface, light incident from the light incident surface travels in the silicon substrate.
Bibliography:Application Number: KR20117016030