NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A non-volatile memory apparatus and a manufacturing method thereof are provided to arrange a doped pipe channel which connects the lower end part of a pair of pillar shape cell channels, thereby simplifying processes by omitting a pipe gate formation process. CONSTITUTION: A pair of pillar...

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Bibliographic Details
Main Authors LEE, KI HONG, HONG, KWON, JOO, MOON SIG
Format Patent
LanguageEnglish
Korean
Published 07.12.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A non-volatile memory apparatus and a manufacturing method thereof are provided to arrange a doped pipe channel which connects the lower end part of a pair of pillar shape cell channels, thereby simplifying processes by omitting a pipe gate formation process. CONSTITUTION: A pair of pillar shape cell channels is extended to a vertical direction with respect to a substrate(21). A doped pipe channel(30D) connects the lower end part of the pair of pillar shape cell channels. The doped pipe channel is buried in an insulating film(22). A memory film(29A,29B) is arranged in order to cover a lateral surface of the pillar shape cell channel. A control gate electrode(26A,26B) is arranged in order to cover the lateral surface of the pillar shape cell channel and memory film.
Bibliography:Application Number: KR20100051420