EMBEDDED DRAM FOR EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR

PURPOSE: An embedded DRAM for thin semiconductor-one-insulator is provided to improve the performance of an eDRAM cell by controlling the interval of the source of an access transistor and the internal node of a deep trench. CONSTITUTION: A deep trench is arranged in a SOI(Semiconductor-On-Insulator...

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Main Authors ERVIN JOSEPH, BOOTH JR. ROGER ALLEN, PEI CHENGWEN, CHENG KANGGUO, WANG GENG, KHAKIFIROOZ ALI, TODI RAVI M
Format Patent
LanguageEnglish
Korean
Published 16.11.2011
Subjects
ELECTRICITY
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Summary:PURPOSE: An embedded DRAM for thin semiconductor-one-insulator is provided to improve the performance of an eDRAM cell by controlling the interval of the source of an access transistor and the internal node of a deep trench. CONSTITUTION: A deep trench is arranged in a SOI(Semiconductor-On-Insulator) substrate(8). The SOI substrate comprises a top semiconductor layer(30) which includes the plane source domain of an access transistor. A conductivity trench fill domain(60) is arranged in the deep trench. A source domain is touched to the top surface of the plane source domain. A strap domain is touched to the top surface of the strap region is touched and the conductivity trench fill domain.
Bibliography:Application Number: KR20110042306