ARRAY SUBSTRATE AND FABRICATING METHOD FOR THE SAME
PURPOSE: A thin film transistor and manufacturing method thereof are provided to increase the quality of a display device by preventing cross-talk after reducing leakage current. CONSTITUTION: An active layer(121) includes a channel region. A gate electrode copes with the channel region. A gate insu...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
07.11.2011
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A thin film transistor and manufacturing method thereof are provided to increase the quality of a display device by preventing cross-talk after reducing leakage current. CONSTITUTION: An active layer(121) includes a channel region. A gate electrode copes with the channel region. A gate insulating layer(131) locates between an active layer and a gate electrode. The gate electrode includes a transparent conductive film(143) and a transparent conductive film(142). |
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Bibliography: | Application Number: KR20100041005 |