ARRAY SUBSTRATE AND FABRICATING METHOD FOR THE SAME

PURPOSE: A thin film transistor and manufacturing method thereof are provided to increase the quality of a display device by preventing cross-talk after reducing leakage current. CONSTITUTION: An active layer(121) includes a channel region. A gate electrode copes with the channel region. A gate insu...

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Bibliographic Details
Main Authors WON, YU BONG, JUNG, JIN GOO, TAE, SEUNG GYU
Format Patent
LanguageEnglish
Korean
Published 07.11.2011
Subjects
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PURPOSE: A thin film transistor and manufacturing method thereof are provided to increase the quality of a display device by preventing cross-talk after reducing leakage current. CONSTITUTION: An active layer(121) includes a channel region. A gate electrode copes with the channel region. A gate insulating layer(131) locates between an active layer and a gate electrode. The gate electrode includes a transparent conductive film(143) and a transparent conductive film(142).
Bibliography:Application Number: KR20100041005