METHOD OF FARBRICATING SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device includes forming a gate dielectric layer and a first gate layer sequentially on an overall surface of a substrate including a first region and a second region, forming a lanthanum-oxide (La2O3) mask pattern on the first gate layer disposed on the second...

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Bibliographic Details
Main Authors PARK, CHEOL WOO, KIM, EUN GON, LEE, KWANG YUL, PARK, MOON HAN, LEE, SANG MIN
Format Patent
LanguageEnglish
Korean
Published 30.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device includes forming a gate dielectric layer and a first gate layer sequentially on an overall surface of a substrate including a first region and a second region, forming a lanthanum-oxide (La2O3) mask pattern on the first gate layer disposed on the second region, and selectively removing the first gate layer disposed on the first region by etching using the La2O3 mask pattern as a mask, thereby forming a first gate layer pattern on the second region.
Bibliography:Application Number: KR20100026430