STACKED MEMORY DEVICE AND METHOD OF REPAIRING THE SAME

A stacked semiconductor memory device comprises memory cell array layers that are stacked in an inverted wedge shape and have different redundancy sizes from each other. The stacked semiconductor memory device has space for vertical connection between layers, a relatively small size, and a relativel...

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Bibliographic Details
Main Authors LEE, WON SEOK, PARK, CHUL WOO, HWANG, HONG SUN, KANG, SANG BEOM
Format Patent
LanguageEnglish
Korean
Published 26.09.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A stacked semiconductor memory device comprises memory cell array layers that are stacked in an inverted wedge shape and have different redundancy sizes from each other. The stacked semiconductor memory device has space for vertical connection between layers, a relatively small size, and a relatively high yield.
Bibliography:Application Number: KR20100024405