A METHOD FOR FORMING A LATERAL MOSFET WITH SUBSTRATE DRAIN CONNECTION

• Main Authors: DOLNY GARY M, GREBS THOMAS E, KINZER DANIEL M
• Format: Patent
• Language: English; Korean
• Published: 08.09.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In one form a lateral MOSFET includes an active gate positioned laterally between a source region and a drain region, the drain region extending from an upper surface of a monocrystalline semiconductor body to a bottom surface of the monocrystalline semiconductor body, and a non-active gate positioned above the drain region. In another form the lateral MOSFET includes a gate positioned laterally between a source region and a drain region, the drain region extending from an upper surface of a monocrystalline semiconductor body to a bottom surface of the monocrystalline semiconductor body, the source region and the drain region being of a first conductivity type, a heavy body region of a second conductivity type in contact with and below the source region, and the drain region comprising a lightly doped drain (LDD) region proximate an edge of the gate and a sinker extending from the upper surface of the monocrystalline body to the bottom surface of the monocrystalline semiconductor body.