PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD
A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing de...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
18.08.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used. |
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Bibliography: | Application Number: KR20117012127 |