PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD

A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing de...

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Bibliographic Details
Main Authors TARUTANI SHINJI, KAMIMURA SOU
Format Patent
LanguageEnglish
Korean
Published 18.08.2011
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Summary:A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.
Bibliography:Application Number: KR20117012127