SOI WAFER MANUFACTURING METHOD

• Main Authors: ISHIZUKA TOHRU, NOTO NOBUHIKO, AGA HIROJI, KOBAYASHI NORIHIRO
• Format: Patent
• Language: English; Korean
• Published: 12.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention is a method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness by means of: performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film. As a result, there is provided a method for manufacturing an SOI wafer superior in thickness uniformity of the buried oxide film by controlling within a predetermined range the deterioration of the in-plane distribution of the buried oxide film, which is caused by nonuniformity of the heat treatment temperature or the like during the heat treatment for reducing the thickness of the buried oxide film.