MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED BY THE SAME

• Main Author: CHEON JOO YOUNG
• Format: Patent
• Language: English; Korean
• Published: 11.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby are provided to improve optical extraction efficiency by improve the crystalline quality of a quantum well layer and internal quantum efficiency. CONSTITUTION: An active layer(140) is formed by laminating at least one quantum barrier layer(141) by turns which sequentially is laminated with at least one or more quantum well layers, a first quantum barrier layer(143), and a second quantum barrier layer(145). The quantum well layers are formed on a first electrical conductive semiconductor layer. The first quantum barrier layer is formed at the growth temperature of the quantum well layer. The second quantum barrier layer is formed at higher temperature of the growth temperature of the quantum well layer. A second electrical conductive semiconductor layer is formed on the active layer.