ORGANIC FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THEREOF

PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to prevent a nozzle jam when semiconductor layer is formed using two fluid-nozzle and to gate-control by ionic gel which is pattered as small size on a plastic substrate. CONSTITUTION: Source and a drain elec...

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Bibliographic Details
Main Authors LEE, SUNG WON, JEONG, UN YOUNG
Format Patent
LanguageEnglish
Korean
Published 11.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to prevent a nozzle jam when semiconductor layer is formed using two fluid-nozzle and to gate-control by ionic gel which is pattered as small size on a plastic substrate. CONSTITUTION: Source and a drain electrode are formed on a substrate. An organic semiconductor layer is formed on the substrate in which the source and the drain electrode are formed. An insulating layer is formed on the organic semiconductor layer. A gate electrode is formed on the insulating layer. The insulating layer is carbon compound in which predetermined ionic liquid, a diacrylate supporter, and polymerization initiator are dually connected.
Bibliography:Application Number: KR20100010756