METHOD OF FABRICATING SEMICONDUCTOR DEVICE

PURPOSE: A manufacturing method of a semiconductor device is provided to offer oxide mask having no deformity including seam etc by oxidizing a metal layer of the lower part. CONSTITUTION: An under-layer(25) is formed on the top of a substrate. A sacrificing layer is formed on the under-layer. An op...

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Bibliographic Details
Main Authors JEONG, JUN HO, CHOI, SUK HUN, OH, SE CHUNG, LEE, JEA HYOUNG, LIM, WOO CHANG, LEE, JANG EUN, KIM, WOO JIN
Format Patent
LanguageEnglish
Korean
Published 04.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A manufacturing method of a semiconductor device is provided to offer oxide mask having no deformity including seam etc by oxidizing a metal layer of the lower part. CONSTITUTION: An under-layer(25) is formed on the top of a substrate. A sacrificing layer is formed on the under-layer. An opening(30a) which exposes a fixed region of the under-layer is formed by patterning the sacrificing layer. A mask layer(35) is formed in the opening. An oxide mask(40) is formed by oxidizing the entire or partial mask layer. An under-layer pattern is formed by eliminating the sacrificing layer and etching the under-layer using the oxide mask as an etching mask.
Bibliography:Application Number: KR20100008756