SEMICONDUCTOR DIE SINGULATION METHOD

PURPOSE: A semiconductor die singulation method is provided to completely penetrate a semiconductor wafer to etch openings, thereby shortening time for singulation. CONSTITUTION: A semiconductor wafer comprises a plurality of semiconductor dies(42,44,46). Trenches(50,54,58) surrounding the perimeter...

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Bibliographic Details
Main Authors GRIVNA GORDON M, SEDDON MICHAEL J
Format Patent
LanguageEnglish
Korean
Published 26.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor die singulation method is provided to completely penetrate a semiconductor wafer to etch openings, thereby shortening time for singulation. CONSTITUTION: A semiconductor wafer comprises a plurality of semiconductor dies(42,44,46). Trenches(50,54,58) surrounding the perimeter of each semiconductor die are formed in parts of the semiconductor wafer. A dielectric layer is formed on the sidewalls of the trenches. A filler material contacts the dielectric layer. A passivation layer is placed on parts of the semiconductor dies. A first opening is etched to expose the filter material of the trench. A second opening completely penetrates the semiconductor substrate from the surface of the semiconductor wafer.
Bibliography:Application Number: KR20110003408