PROCESS FOR PRODUCING PHOTORESIST PATTERN

• Main Authors: HAH, JUNG HWAN, HATA MITSUHIRO
• Format: Patent
• Language: English; Korean
• Published: 13.07.2011
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE: A method for manufacturing photo-resist patterns is provided to obtain superior photo-resist patterns by forming photo-resist films and implementing exposing and developing processes. CONSTITUTION: A method for manufacturing photo-resist patterns includes the following: A first photo-resist film is formed on a substrate by coating a first photo-resist composition. A first photo-resist pattern is formed through an exposing and developing process. The first photo-resist pattern is processed to be inactive or insoluble. A second photo-resist composition including a resin and at least one acid generator is applied on the first photo-resist pattern to form a second photo-resist film. The resin includes a structural unit with an acid-inactive group. The acid generator is selected from a group including photo-acid generators represented by chemical formulas I and II. The second photo-resist film is exposed. The exposed second photo-resist film is developed with an alkaline developing solution to form a second photo-resist pattern.