LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR

PURPOSE: An LDMOS(Lateral Double Diffused Metal Oxide Semiconductor) transistor is provided to increase a break voltage and an on-resistance by forming a current path in the center thereof. CONSTITUTION: A first conductive drift region is formed under the upper surface of a semiconductor substrate....

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Bibliographic Details
Main Author KIM, HAN GEON
Format Patent
LanguageEnglish
Korean
Published 07.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An LDMOS(Lateral Double Diffused Metal Oxide Semiconductor) transistor is provided to increase a break voltage and an on-resistance by forming a current path in the center thereof. CONSTITUTION: A first conductive drift region is formed under the upper surface of a semiconductor substrate. A second conductive body region(107) is separated from a drift region and is formed under the surface of a semiconductor substrate. A first conductive source region(113) is formed in the body region. A first conductive drain region is formed in the drift region. A field insulation layer is formed on the surface of the semiconductor substrate in the first conductive drift region between the source region and the drain region. A first conductive gate electrode(115) is loaded on the field insulation layer and the second conductive body region. A second conductive gate electrode is formed on both edges of the field insulation layer.
Bibliography:Application Number: KR20090135797