SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THESAME

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to suppress the generation of a leakage current between a gate poly and source/drain regions by forming an air layer in an insulating layer. CONSTITUTION: In a semiconductor device and a method for manufacturing the...

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Bibliographic Details
Main Author LEE, KYOUNG JIN
Format Patent
LanguageEnglish
Korean
Published 07.07.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device and a method for manufacturing the same are provided to suppress the generation of a leakage current between a gate poly and source/drain regions by forming an air layer in an insulating layer. CONSTITUTION: In a semiconductor device and a method for manufacturing the same, a gate pattern consisting of a gate insulating layer(20) and a gate poly(30) is formed within a substrate(10). A first insulating layer(50) is formed on the top of the substrate in which the gate pattern is formed. A hole is formed in the insulating layer by etching a part of the first insulating layer. The second insulating layer(60) is formed on the first insulating layer. A photoresist pattern(70) is formed on the second insulating layer(60).
Bibliography:Application Number: KR20090135783