SEMICONDUCTOR DEVICE WITH BURIED BITLINE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: A semiconductor device including a buried bit line and a manufacturing method thereof are provided to stably form a bit line by bonding a second substrate on the rear of a first substrate after the buried bit line is formed on the first substrate. CONSTITUTION: A first substrate(21B) is for...

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Bibliographic Details
Main Authors KOO, SUN YOUNG, LIM, CHANG MOON
Format Patent
LanguageEnglish
Korean
Published 07.07.2011
Subjects
ELECTRICITY
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Summary:PURPOSE: A semiconductor device including a buried bit line and a manufacturing method thereof are provided to stably form a bit line by bonding a second substrate on the rear of a first substrate after the buried bit line is formed on the first substrate. CONSTITUTION: A first substrate(21B) is formed on a peripheral circuit area(202). An insulation layer(27) is formed on the first substrate. A buried bit line(BL) is buried in the insulation layer. A second substrate(28) is boned with the rear of the insulation layer. The second substrate is adhered to the insulation layer through a bonding(29).
Bibliography:Application Number: KR20090134782