CHEMICAL VAPOR DEPOSITION APPARATUS, GUIDE MEMBER FOR THE CHEMICAL VAPOR DEPOSITION APPARATUS AND CHEMICAL VAPOR DEPOSITION METHOD USING THE CHEMICAL VAPOR DEPOSITION APPARATUS

PURPOSE: A chemical vapor deposition apparatus, guide member for the chemical vapor deposition apparatus, and chemical vapor deposition method using the chemical vapor deposition apparatus are provided to replace only a guide member or additionally insert a guide member, thereby properly controlling...

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Bibliographic Details
Main Author HAN, MYUNG WOO
Format Patent
LanguageEnglish
Korean
Published 23.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A chemical vapor deposition apparatus, guide member for the chemical vapor deposition apparatus, and chemical vapor deposition method using the chemical vapor deposition apparatus are provided to replace only a guide member or additionally insert a guide member, thereby properly controlling a gas discharging path. CONSTITUTION: A first chamber(100) and a second chamber(200) are bonded each other to configure a reaction chamber(800). A processing gas inlet(101) is placed on the top of the first chamber. An inert gas inlet(102) supplies an inert gas(G2) to an inert gas curtain unit(400). The inert gas inlet is placed on a side of the first chamber. A shower head(300) makes a processing gas(G1) erupt toward a substrate(S). A guide member comprises an outer circumferential wall, a curved part, an inner circumferential wall, and an outlet.
Bibliography:Application Number: KR20110051579