TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING AT THE SAME

PURPOSE: A transferred thin film transistor and a manufacturing method thereof are provided to separate an active layer from a silicon wafer by a dry etching method and transfer the active layer to a flexible substrate, thereby maximizing productivity. CONSTITUTION: A source area(12), a drain area(1...

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Bibliographic Details
Main Authors KANG, SEUNG YOUL, KOO, JAE BON, MUSARRAT HASAN, CHO, KYOUNG IK, AHN, JONG HYUN, YOU, IN KYU
Format Patent
LanguageEnglish
Korean
Published 15.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A transferred thin film transistor and a manufacturing method thereof are provided to separate an active layer from a silicon wafer by a dry etching method and transfer the active layer to a flexible substrate, thereby maximizing productivity. CONSTITUTION: A source area(12), a drain area(14), and a channel area(15) are expanded on a first substrate(10) in a first direction. A trench(18) is expanded on the first substrate in the second direction crossing the first direction. A photoresist pattern(20) is formed on an active layer(16) between the trenches. The first substrate in the trench is etched by an anisotropic etching process so that the active layer is separated from the first substrate. The active layer is bonded with a second substrate.
Bibliography:Application Number: KR20090120621