A COMPOSITION AND SLURRY USEFUL FOR METAL CMP
PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a semiconductor at a fast speed, and to ensure excellent long-term storage and activity. CONSTITUTION: A chemical mechanical polishing compositio...
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Format | Patent |
Language | English Korean |
Published |
10.06.2011
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Abstract | PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a semiconductor at a fast speed, and to ensure excellent long-term storage and activity. CONSTITUTION: A chemical mechanical polishing composition for polishing one or more tungsten layers of a semiconductor substrate comprises (a) hydrogen peroxide, (b) an iron-containing catalyst promoting chemical reaction between hydrogen peroxide and a tungsten layer, (c) fumed or precipitated silica, and (d) deionized water. In the composition, hydrogen peroxide is present in the amount of 0.5-10 weight%. The iron-containing catalyst is present in the amount of 0.001-0.05 weight%. |
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AbstractList | PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a semiconductor at a fast speed, and to ensure excellent long-term storage and activity. CONSTITUTION: A chemical mechanical polishing composition for polishing one or more tungsten layers of a semiconductor substrate comprises (a) hydrogen peroxide, (b) an iron-containing catalyst promoting chemical reaction between hydrogen peroxide and a tungsten layer, (c) fumed or precipitated silica, and (d) deionized water. In the composition, hydrogen peroxide is present in the amount of 0.5-10 weight%. The iron-containing catalyst is present in the amount of 0.001-0.05 weight%. |
Author | GRUMBINE STEVEN K MUELLER BRIAN L STREINZ CHRISTOPHER C |
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RelatedCompanies | CABOT MICROELECTRONICS CORPORATION |
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Snippet | PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a... |
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SubjectTerms | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NATURAL RESINS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES |
Title | A COMPOSITION AND SLURRY USEFUL FOR METAL CMP |
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