A COMPOSITION AND SLURRY USEFUL FOR METAL CMP
PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a semiconductor at a fast speed, and to ensure excellent long-term storage and activity. CONSTITUTION: A chemical mechanical polishing compositio...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
10.06.2011
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a semiconductor at a fast speed, and to ensure excellent long-term storage and activity. CONSTITUTION: A chemical mechanical polishing composition for polishing one or more tungsten layers of a semiconductor substrate comprises (a) hydrogen peroxide, (b) an iron-containing catalyst promoting chemical reaction between hydrogen peroxide and a tungsten layer, (c) fumed or precipitated silica, and (d) deionized water. In the composition, hydrogen peroxide is present in the amount of 0.5-10 weight%. The iron-containing catalyst is present in the amount of 0.001-0.05 weight%. |
---|---|
Bibliography: | Application Number: KR20110032110 |