A COMPOSITION AND SLURRY USEFUL FOR METAL CMP

• Main Authors: MUELLER BRIAN L, GRUMBINE STEVEN K, STREINZ CHRISTOPHER C
• Format: Patent
• Language: English; Korean
• Published: 10.06.2011
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES

PURPOSE: A chemical mechanical polishing composition is provided to perform the polishing of a metal layer and a thin film required for the manufacture of a semiconductor at a fast speed, and to ensure excellent long-term storage and activity. CONSTITUTION: A chemical mechanical polishing composition for polishing one or more tungsten layers of a semiconductor substrate comprises (a) hydrogen peroxide, (b) an iron-containing catalyst promoting chemical reaction between hydrogen peroxide and a tungsten layer, (c) fumed or precipitated silica, and (d) deionized water. In the composition, hydrogen peroxide is present in the amount of 0.5-10 weight%. The iron-containing catalyst is present in the amount of 0.001-0.05 weight%.