IR SENSING TRANSISTOR AND MANUFACTURING METHOD THEREOF
PURPOSE: An IR sensing transistor and manufacturing method thereof are provided to include N type impurities in a semiconductor, thereby enhancing the sensing features of the IR sensing transistor. CONSTITUTION: A light shielding layer is formed on a substrate. A lower gate electrode is formed on th...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
10.06.2011
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PURPOSE: An IR sensing transistor and manufacturing method thereof are provided to include N type impurities in a semiconductor, thereby enhancing the sensing features of the IR sensing transistor. CONSTITUTION: A light shielding layer is formed on a substrate. A lower gate electrode is formed on the light shielding layer. A shielding film is formed on the lower gate electrode. A semiconductor(154) including N type impurities is formed on the shielding film. Ohmic contact members(163,165) are formed on the semiconductor. A source electrode and a drain electrode(175) are formed on the ohmic contact layer. An insulating film is formed on the source electrode and the drain electrode. An upper gate electrode is formed on the insulating film and is connected to the lower gate electrode. |
---|---|
Bibliography: | Application Number: KR20090118620 |