IR SENSING TRANSISTOR AND MANUFACTURING METHOD THEREOF

PURPOSE: An IR sensing transistor and manufacturing method thereof are provided to include N type impurities in a semiconductor, thereby enhancing the sensing features of the IR sensing transistor. CONSTITUTION: A light shielding layer is formed on a substrate. A lower gate electrode is formed on th...

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Main Authors CHO, BYEONG HOON, KIM, WOONG KWON, JEON, KYUNG SOOK, BANG, JUNG SUK, YANG, SUNG HOON
Format Patent
LanguageEnglish
Korean
Published 10.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An IR sensing transistor and manufacturing method thereof are provided to include N type impurities in a semiconductor, thereby enhancing the sensing features of the IR sensing transistor. CONSTITUTION: A light shielding layer is formed on a substrate. A lower gate electrode is formed on the light shielding layer. A shielding film is formed on the lower gate electrode. A semiconductor(154) including N type impurities is formed on the shielding film. Ohmic contact members(163,165) are formed on the semiconductor. A source electrode and a drain electrode(175) are formed on the ohmic contact layer. An insulating film is formed on the source electrode and the drain electrode. An upper gate electrode is formed on the insulating film and is connected to the lower gate electrode.
Bibliography:Application Number: KR20090118620