METHOD FOR FABRICATING PARTIAL SILICON ON INSULATOR

PURPOSE: A method for manufacturing a partial SOI substrate is provided to prevent a single layer by optimizing an epitaxial process through the control of a process condition and time before a silicon layer is formed. CONSTITUTION: A pretreatment process is performed on a first silicon layer using...

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Bibliographic Details
Main Authors LEE, YOUNG HO, BAEK, SEUNG BEOM, AHN, TAE HANG
Format Patent
LanguageEnglish
Korean
Published 08.06.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a partial SOI substrate is provided to prevent a single layer by optimizing an epitaxial process through the control of a process condition and time before a silicon layer is formed. CONSTITUTION: A pretreatment process is performed on a first silicon layer using hydrogen. A sacrificial layer and a second silicon layer are laminated on the first silicon layer. The second silicon layer and the sacrificial layer are patterned. A third silicon layer is formed on the first silicon layer exposed by the patterning and the patterned second silicon layer. A trench is formed by etching the third silicon layer, the second silicon layer, and the sacrificial layer.
Bibliography:Application Number: KR20090117401