ANTIREFLECTIVE FILM FORMATION METHOD, ANTIREFLECTIVE FILM, AND FILM FORMATION DEVICE

• Main Authors: YANAGITSUBO HIDENORI, TAKAHASHI HIROHISA, ISHIBASHI SATORU, YAMAMOTO HARUHIKO
• Format: Patent
• Language: English; Korean
• Published: 02.06.2011
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DIFFUSION TREATMENT OF METALLIC MATERIAL; FREQUENCY-CHANGING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICAL LOGIC ELEMENTS; OPTICS; PERFORMING OPERATIONS; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; TRANSPORTING

A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas.