PROCESS FOR PRODUCING PHOTORESIST PATTERN

• Main Authors: HASHIMOTO KAZUHIKO, HATA MITSUHIRO
• Format: Patent
• Language: English; Korean
• Published: 27.04.2011
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE: A method for manufacturing a photoresist pattern is provided to reduce performance deterioration due to the inactivation of acid by adding nitrogen-containing organic base compound as a quencher. CONSTITUTION: A first photoresist film is formed by drying a first photoresist compound after the first photoresist compound including a resin and an acid generator is coated on a substrate. A prebaked first photoresist layer is exposed with radiation. A first photoresist pattern is formed by developing the first photoresist layer which is baked by using a first alkali developer. A coating layer is formed on the first photoresist pattern. A second photoresist layer is formed by drying a second photoresist compound after the second photoresist compound is coated on a coating layer. The prebaked second photoresist layer is exposed with radiation. A second photoresist pattern is formed by developing the baked second photoresist layer using a second alkali developer.