MEHTOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE
PURPOSE: A method of fabricating a thin film transistor substrate are provided to remove a process of lifting off third photosensitive film and a third conductive film on the third photosensitive film by forming an undercut in a sacrificial layer. CONSTITUTION: In a method of fabricating a thin film...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
20.04.2011
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method of fabricating a thin film transistor substrate are provided to remove a process of lifting off third photosensitive film and a third conductive film on the third photosensitive film by forming an undercut in a sacrificial layer. CONSTITUTION: In a method of fabricating a thin film transistor substrate, a gate line and a gate line pattern including the gate line which are made of a first conductive material are formed on a substrate(100) using a first mask. A first insulating layer(110A) is formed on the substrate. A data line pattern including a data line, a source electrode, and a drain electrode is formed with a second conductive material on an insulating layer using the second mask. A second insulating layer(110B) is formed on the substrate. A pixel electrode connected to the drain electrode on the second insulating film which is made of the third conductive material. |
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Bibliography: | Application Number: KR20090096807 |