MEHTOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE

• Main Authors: KIM, SANG GAB, SONG, JUN HO, LEE, KYE HUN, CHIN, HONG KEE, YEO, YUN JONG, LEE, HO JUN
• Format: Patent
• Language: English; Korean
• Published: 20.04.2011
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: A method of fabricating a thin film transistor substrate are provided to remove a process of lifting off third photosensitive film and a third conductive film on the third photosensitive film by forming an undercut in a sacrificial layer. CONSTITUTION: In a method of fabricating a thin film transistor substrate, a gate line and a gate line pattern including the gate line which are made of a first conductive material are formed on a substrate(100) using a first mask. A first insulating layer(110A) is formed on the substrate. A data line pattern including a data line, a source electrode, and a drain electrode is formed with a second conductive material on an insulating layer using the second mask. A second insulating layer(110B) is formed on the substrate. A pixel electrode connected to the drain electrode on the second insulating film which is made of the third conductive material.