EPITAXIAL WAFER AND METHOD OF PRODUCING SAME

PURPOSE: An epitaxial wafer and a manufacturing method thereof are provided to capture the metal impurity of an epitaxial layer and an active layer while implementing the polishing stop and the etching stop with high accuracy. CONSTITUTION: An ion injection layer is formed on the surface of the sili...

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Bibliographic Details
Main Authors ENDO AKIHIKO, NONOGAKI YOSHIHISA, NISHIHATA HIDEKI
Format Patent
LanguageEnglish
Korean
Published 15.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An epitaxial wafer and a manufacturing method thereof are provided to capture the metal impurity of an epitaxial layer and an active layer while implementing the polishing stop and the etching stop with high accuracy. CONSTITUTION: An ion injection layer is formed on the surface of the silicon wafer by ion-injecting the oxygen from the surface of the silicon wafer(11). The boron is ion-implanted on a portion of the ion injection layer from the surface of the silicon wafer. A thinning stopping layer(12) containing the silicon particle, the silicon oxide, and the boron is formed. An active layer(13) is formed on the thinning stopping layer.
Bibliography:Application Number: KR20100097783