SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

PURPOSE: A semiconductor device and a display apparatus is provided to prevent the defect of the bright dot caused by the increase of leak current flowing between source and drain electrodes by comprising the parasitic capacitance having low off leak current, low on-resistance, and the low parasitic...

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Bibliographic Details
Main Authors KANNO MICHIHIRO, KAWAMURA TAKAHIRO
Format Patent
LanguageEnglish
Korean
Published 06.04.2011
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PURPOSE: A semiconductor device and a display apparatus is provided to prevent the defect of the bright dot caused by the increase of leak current flowing between source and drain electrodes by comprising the parasitic capacitance having low off leak current, low on-resistance, and the low parasitic capacitance. CONSTITUTION: A gate electrode(13) having the peripheral unit within an insulating layer(12) is formed. A semiconductor thin film(15) is formed on the insulating layer. A channel protection layer(16) is formed on the semiconductor substrate. A first electrode(18) has a portion having one edge out of the channel protection layer. A second electrode(19) has the portion covering the other edge out of the channel protection layer.
Bibliography:Application Number: KR20100089849