NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE

PURPOSE: A non-volatile semiconductor storage device is provided to supply high voltage to the gate of an unselected memory cell to make the selected memory cell close to a second wiring. CONSTITUTION: A memory cell array is comprised of a memory string having a plurality of memory cells. A first in...

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Bibliographic Details
Main Authors FUTATSUYAMA TAKUYA, NAMIKI YUKO
Format Patent
LanguageEnglish
Korean
Published 23.03.2011
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: A non-volatile semiconductor storage device is provided to supply high voltage to the gate of an unselected memory cell to make the selected memory cell close to a second wiring. CONSTITUTION: A memory cell array is comprised of a memory string having a plurality of memory cells. A first interconnection is connected to one end of the memory string. The first interconnection is charged with a first voltage in a read operation. A second interconnection is connected to the other end of the memory string. The second wiring is charged with a second voltage in a read operation. A control circuit controls reading and writing data. The second voltage is lower than the first voltage.
Bibliography:Application Number: KR20100088369