METHOD OF FABRICATING SEMICONDUCTOR DEVICE

PURPOSE: A semiconductor device manufacturing method is provided to reduce the micro loading which can occur during the process by etching the high dielectric material. CONSTITUTION: An underlying pattern is formed on a substrate(100). At least one dielectric layer is formed on the underlying patter...

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Bibliographic Details
Main Authors JEON, KYUNG YUB, SONG, JONG HEUI, YANG, SONG YI
Format Patent
LanguageEnglish
Korean
Published 10.03.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device manufacturing method is provided to reduce the micro loading which can occur during the process by etching the high dielectric material. CONSTITUTION: An underlying pattern is formed on a substrate(100). At least one dielectric layer is formed on the underlying pattern. The top dielectric layer is formed on one or more dielectric layer. The upper pattern exposing a partial domain of the top dielectric layer is formed on the top dielectric layer. The partial domain of the top dielectric layer(120c) exposing is etched.
Bibliography:Application Number: KR20090083513