STRUCTUERS AND METHODS TO IMPROVE LEAD-FREE C4 INTERCONNECT RELIABILITY

PURPOSE: A lead-free C4 wiring reliability improvement structure and a method thereof are provided to improve the reliability of the lead-free C4 wiring. CONSTITUTION: A SOG layer has the shape which can be controlled by the CMP process. A PSPI layer is exposed and baked by the conventional method w...

Full description

Saved in:
Bibliographic Details
Main Authors SULLIVAN TIMOTHY DOOLING, PAUL FRANCIS FORTIER, DAUBENSPECK TIMOTHY HARRISON, QUESTAD DAVID L, GAMBINO JEFFREY P, SAUTER WOLFGANG, MUZZY CHRISTOPHER DAVID
Format Patent
LanguageEnglish
Korean
Published 20.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A lead-free C4 wiring reliability improvement structure and a method thereof are provided to improve the reliability of the lead-free C4 wiring. CONSTITUTION: A SOG layer has the shape which can be controlled by the CMP process. A PSPI layer is exposed and baked by the conventional method which can be understood by those who has the average technology in the field. The second nitride layer(25) has the thickness of 0.40μm.
Bibliography:Application Number: KR20100066973