SIDEWALL STRUCTURED SWITCHABLE RESISTOR CELL

A method of making a memory device includes forming a first conductive electrode, forming an insulating structure over the first conductive electrode, forming a resistivity switching element on a sidewall of the insulating structure, forming a second conductive electrode over the resistivity switchi...

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Bibliographic Details
Main Author SCHEUERLEIN ROY E
Format Patent
LanguageEnglish
Korean
Published 19.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of making a memory device includes forming a first conductive electrode, forming an insulating structure over the first conductive electrode, forming a resistivity switching element on a sidewall of the insulating structure, forming a second conductive electrode over the resistivity switching element, and forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode, wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in second direction perpendicular to the first direction.
Bibliography:Application Number: KR20107024382