METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING BOWING PROFILE

PURPOSE: A semiconductor device manufacturing method is provided to minimize the bowing profile by removing the electron shielding effect by neutralizing the electrons remaining on the sidewall of the hard mask layer pattern which is used during M1C(Metal 1 Contact) etching process. CONSTITUTION: An...

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Bibliographic Details
Main Author LEE, DONG RYEOL
Format Patent
LanguageEnglish
Korean
Published 11.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device manufacturing method is provided to minimize the bowing profile by removing the electron shielding effect by neutralizing the electrons remaining on the sidewall of the hard mask layer pattern which is used during M1C(Metal 1 Contact) etching process. CONSTITUTION: An inter-layer insulating film(35) is formed on a bottom wiring(34). A hard mask film pattern(36) is formed on the inter-layer insulating film. The sidewall of the hard mask film pattern is hydrogen-treated. A contact hole(39) is formed by etching the inter-layer insulating film with the hard mask film pattern as the etching barrier.
Bibliography:Application Number: KR20090060640