PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS

PURPOSE: A photoacid generator is provided to enable effective use in resist materials in the ArF immersion lithography due to minimized leach-out in water and controlled formation of foreign matter inherent to the immersion lithography, and to overcome the problems of LWR and exposure. CONSTITUTION...

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Bibliographic Details
Main Authors KINSHO TAKESHI, OHASHI MASAKI, WATANABE TAKERU, OHSAWA YOUICHI
Format Patent
LanguageEnglish
Korean
Published 10.01.2011
Subjects
ACYCLIC OR CARBOCYCLIC COMPOUNDS
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC CHEMISTRY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A photoacid generator is provided to enable effective use in resist materials in the ArF immersion lithography due to minimized leach-out in water and controlled formation of foreign matter inherent to the immersion lithography, and to overcome the problems of LWR and exposure. CONSTITUTION: A chemically amplified resist composition comprises a photoacid generator which generates a sulfonic acid having the general formula(1) in response to high-energy radiation or heat, wherein R is a substituted or unsubstituted, monovalent hydrocarbon group having an aromatic ring or alicyclic hydrocarbon structure of at least 5 carbon atoms, R' is hydrogen or trifluoromethyl, A is an ester, ether, thioether, amide or carbonate bond, and n is an integer of 1 to 3.
Bibliography:Application Number: KR20100062199