METHOD FOR FABRICATING CAPACITOR HAVING CYLINDER TYPE STORAGE ELECTRODE

PURPOSE: A capacitor manufacturing method including the cylinder storage electrode is provided to prevent the occurrence of bunker defect by etching an interlayer insulation layer on the bottom of a storage node contact during the process of dipping a mold layer out. CONSTITUTION: A buffer layer, a...

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Bibliographic Details
Main Authors PARK, JONG KOOK, PARK, JONG BUM, SONG, HAN SANG
Format Patent
LanguageEnglish
Korean
Published 06.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A capacitor manufacturing method including the cylinder storage electrode is provided to prevent the occurrence of bunker defect by etching an interlayer insulation layer on the bottom of a storage node contact during the process of dipping a mold layer out. CONSTITUTION: A buffer layer, a second conductive layer(260), and a first conductive layer(240) are successively formed on a semiconductor substrate(200). A storage node contact is formed by patterning the buffer layer, the second conductive layer, and the first conductive layer. An etch stopping layer(280) and a mold layer are formed on the resulting layer.
Bibliography:Application Number: KR20090058552