PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNV BASE MATERIAL, AND EPITAXIAL WAFER

• Main Authors: SATOH ISSEI, MIYANAGA MICHIMASA, FUJIWARA SHINSUKE, NAKAHATA HIDEAKI
• Format: Patent
• Language: English; Korean
• Published: 30.12.2010
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Si (l-v-w-x) C w Al x N v crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si (l-v-w-x) C w Al x N v substrate, a method for manufacturing an epitaxial wafer, a Si (l-v-w-x) C w Al x N v substrate, and an epitaxial wafer are provided. A method for manufacturing a Si (l-v-w-x) C w Al x N v substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si (l-v-w-x) C w Al x N v layer 12 (0 < v <1,0<w<1,0<x<1,and0<v+w+x<1) is then grown on the Si substrate 11 by a pulsed laser deposition method.