SPIN-TORQUE MAGNETRORESISTIVE STRUCTURES

PURPOSE: A spin-torque magnetoresistive structures is provided to convert the magnetization of a free magnetic layer between two stable states based on the polarity of the current. CONSTITUTION: A free side(210) comprises a free FM layer(215) strongly combined and exchanged in a free AFM layer(214)....

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Bibliographic Details
Main Author WORLEDGE DANIEL CHRISTOPHER
Format Patent
LanguageEnglish
Korean
Published 08.12.2010
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: A spin-torque magnetoresistive structures is provided to convert the magnetization of a free magnetic layer between two stable states based on the polarity of the current. CONSTITUTION: A free side(210) comprises a free FM layer(215) strongly combined and exchanged in a free AFM layer(214). The free FM layer is close to a non-magnetic spacer layer(220). A GMR spacer layer(213) is close to the free AFM layer and a fixing AFM layer(212). The fixing AFM layer is combined and exchanged in a fixing FM layer(211).
Bibliography:Application Number: KR20100036747