SPIN-TORQUE MAGNETRORESISTIVE STRUCTURES
PURPOSE: A spin-torque magnetoresistive structures is provided to convert the magnetization of a free magnetic layer between two stable states based on the polarity of the current. CONSTITUTION: A free side(210) comprises a free FM layer(215) strongly combined and exchanged in a free AFM layer(214)....
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
08.12.2010
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A spin-torque magnetoresistive structures is provided to convert the magnetization of a free magnetic layer between two stable states based on the polarity of the current. CONSTITUTION: A free side(210) comprises a free FM layer(215) strongly combined and exchanged in a free AFM layer(214). The free FM layer is close to a non-magnetic spacer layer(220). A GMR spacer layer(213) is close to the free AFM layer and a fixing AFM layer(212). The fixing AFM layer is combined and exchanged in a fixing FM layer(211). |
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Bibliography: | Application Number: KR20100036747 |